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| UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. 1 FEATURES *Low collector saturation voltage: VCE(sat)=-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0s(Typ.) *Complement to UTC 2SC2655 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER SYMBOL VALUE -50 -50 -5 -2 0.5 1 150 -55 ~ +150 UNIT V V V A W W C C Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current Ic Collector Power Dissipation PC Collector Power Dissipation PC* Junction Temperature Tj Storage Temperature TSTG * : Mounted on cermic substrate( 250mm2 x 0.8t ) ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified) PARAMETER Collector cut-off current Emitter cut-off current Collector to emitter breakdown voltage DC Current Gain Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Switching time Turn-on time Storage time Fall time SYMBOL ICBO IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob ton tstg tf TEST CONDITIONS VCB=-50V, IE=0 VEB=-5V, IC=0 Ic=-10mA, IB=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-1.5A Ic=-1A, IB=-0.05A Ic=-1A, IB=-0.05A VCE=-2V, Ic=-0.5A VCB=-10V, IE=0, f=1MHz MIN TYP MAX -1.0 -1.0 UNIT A A V -50 70 40 240 -0.5 -1.2 100 40 0.1 1.0 0.1 V V MHz pF s s s UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R208-021,A UTC 2SA1020 RANK RANGE PNP EPITAXIAL SILICON TRANSISTOR O 70 - 140 Y 120 - 240 CLASSIFICATION OF hFE1 TYPICAL PERFORMANCE CHARACTERISTICS VCE-IC Collector Emitter Voltage V (V) CE -10 -20 -40 -80 I(tot) mA -120 -160 -0.4 -0.2 0 -200 Collector Emitter Voltage V (V) CE -1.0 -0.8 -0.6 -1.0 -0.8 -0.6 -0.4 -0.2 0 VCE-IC IB=-5mA IB=-5mA -60 -20 -30 -40I(tot) mA -80 -120 -160 -180 -200 COMMON EMITTER Ta=25 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 Collector Current Ic(A) VCE-IC COMMON EMITTER Ta=100 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 Collector Current Ic(A) hFE-Ic COMMON EMITTER VCE=-2V I(tot) mA 0 0 -1.0 Collector Emitter Voltage V (V) CE IB=-10mA -20 -30 -40 -60 -0.8 I(tot) mA -0.6 -0.4 -0.2 0 COMMON EMITTER Ta=-55 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 Collector Current Ic(A) -80 1000 500 DC Current Gain hFE 300 Ta=100 25 -120 -160 -200 100 50 30 -55 0 -0.4 10 -0.005 -0.01 -0.3 -1 -0.03 -0.1 Collector Current IC(A) -3 UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R208-021,A UTC 2SA1020 -1 Collector -Emitter Saturation Voltage VCE(sat) (V) -0.5 -0.3 PNP EPITAXIAL SILICON TRANSISTOR VCE(sat)-Ic -10 Collector -Emitter Saturation Voltage VBE(sat) (V) -5 -3 -55 VCE(sat)-Ic COMMON EMITTER IC/IB=20 I(tot) mA COMMON EMITTER IC/IB=20 I(tot) mA Ta=100 -0.1 -0.05 -0.03 -55 25 -1 -0.5 -0.3 Ta=100 25 -0.01 -0.005 -0.01 -0.3 -1 -0.03 -0.1 Collector Current IC(A) Ic -VBE -3 -0.1 -0.005 -0.01 -0.3 -1 -0.03 -0.1 Collector Current IC(A) Pc-Ta -3 -2.0 Collector Current Ic (A) Collector Power Dissipatoin Pc,(W) COMMON EMITTER VCE=-2V I(tot) mA -55 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 80 100 120 140 160 40 60 Ambient Temperature Ta 2 1 1.Mounted on Ceramic Substrate (250mm2*0.8t) I(tot) 2.Ta=25 mA -1.5 Ta=100 -1.0 25 -0.5 0 0 -0.4 -1.6 -0.8 -1.2 Base Emitter Voltage VBE(V) Safe Operation Area -5 -3 Collector Current Ic (A) -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 Ic max.(pulsed)* Ic max.(pulsed)* 10ms* 1ms* 10 0m 1s* DC OPERATION Ta=25 s* *Single nonrepetitive pulse Ta=25 Curves must be derated linearly with increase in temperature VCEO MAX -100 -0.3 -1 -3 -10 -30 Collector Emitter Voltage VCE (V) UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R208-021,A UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R208-021,A |
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